Bis(N,N'-di-i-propylformamidinato)strontium dimer, Sr-FMD
Atomic layer deposition (ALD) is a chemical vapor deposition (CVD) technique used to fabricate thin films. It operates by separating two self-limiting half-reactions, both physically and temporally, between a film surface and a vapor-phase precursor. The key advantages of ALD include precise thickness control, uniform coverage of high aspect ratio surfaces, and pinhole-free deposition. However, the effectiveness of an ALD process heavily depends on the properties of the available vapor precursors. An effective ALD precursor must exhibit self-limiting reactivity within a suitable reactor temperature window, demonstrate volatility at reasonable delivery temperatures, and maintain stability at these temperatures for extended periods.
In microelectronic device manufacturing, high-κ (dielectric) materials containing strontium (Sr), such as strontium titanate, are deposited on substrates using various techniques, including CVD and rapid vapor deposition (RVD). The development of new, cleanly volatile strontium precursors is crucial for the atomic layer deposition of strontium titanate dielectric materials, which are essential in the manufacture of advanced dynamic random access memory (DRAM) devices.
Creating such precursors presents significant challenges due to the large ionic radius of Sr²⁺ (1.27 Å). This size requirement necessitates the use of bulky and thermally stable ligands to effectively shield and isolate the metal centers, allowing the formation of low-nuclearity complexes. Inspired by Professor Roy Gordon's research group, we have successfully synthesized the bis(N,N'-diisopropylformamidinato)strontium (Sr-FMD) dimer, as a potential precursor for CVD/ALD processing. The strontium amidinate compound synthesized here shows promise as a precursor in CVD/ALD processing, contributing to critical research in semiconductor processing.
Featured Product:
38-1250 Bis(N,N'-di-i-propylformamidinato)strontium dimer, Sr-FMD